High power 875 nm A-free laser diodes
Identifieur interne : 01E677 ( Main/Repository ); précédent : 01E676; suivant : 01E678High power 875 nm A-free laser diodes
Auteurs : RBID : Pascal:94-0479882Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 01E537
Links to Exploration step
Pascal:94-0479882Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">High power 875 nm A-free laser diodes</title><author><name sortKey="Plano, W E" uniqKey="Plano W">W. E. Plano</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>SDL Inc.</s1><s2>San Jose CA 95134-1365</s2><s3>USA</s3></inist:fA14><country>États-Unis</country><placeName><region type="state">Dakota du Sud</region></placeName></affiliation></author><author><name sortKey="Major, J S Jr" uniqKey="Major J">J. S. Jr Major</name></author><author><name sortKey="Welch, D F" uniqKey="Welch D">D. F. Welch</name></author></titleStmt><publicationStmt><idno type="inist">94-0479882</idno><date when="1994">1994</date><idno type="stanalyst">PASCAL 94-0479882 INIST</idno><idno type="RBID">Pascal:94-0479882</idno><idno type="wicri:Area/Main/Corpus">01E537</idno><idno type="wicri:Area/Main/Repository">01E677</idno></publicationStmt><seriesStmt><idno type="ISSN">1041-1135</idno><title level="j" type="abbreviated">IEEE photonics technol. lett.</title><title level="j" type="main">IEEE photonics technology letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium phosphides</term><term>Indium arsenides</term><term>Indium phosphides</term><term>Laser diodes</term><term>Quantum wells</term><term>Quaternary compounds</term><term>Semiconductor lasers</term><term>Visible radiation</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Laser semiconducteur</term><term>Diode laser</term><term>Indium arséniure</term><term>Gallium arséniure</term><term>Indium phosphure</term><term>Gallium phosphure</term><term>Composé quaternaire</term><term>Puits quantique</term><term>Rayonnement visible</term><term>Etude expérimentale</term><term>InGaAsP</term><term>As Ga In P</term><term>4255P</term></keywords></textClass></profileDesc></teiHeader></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1041-1135</s0></fA01><fA03 i2="1"><s0>IEEE photonics technol. lett.</s0></fA03><fA05><s2>6</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>High power 875 nm A-free laser diodes</s1></fA08><fA11 i1="01" i2="1"><s1>PLANO (W. E.)</s1></fA11><fA11 i1="02" i2="1"><s1>MAJOR (J. S. JR)</s1></fA11><fA11 i1="03" i2="1"><s1>WELCH (D. F.)</s1></fA11><fA14 i1="01"><s1>SDL Inc.</s1><s2>San Jose CA 95134-1365</s2><s3>USA</s3></fA14><fA20><s1>465-467</s1></fA20><fA21><s1>1994</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21972</s2><s5>354000045699020010</s5></fA43><fA44><s0>0000</s0></fA44><fA45><s0>9 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>94-0479882</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>IEEE photonics technology letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F15</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Laser semiconducteur</s0><s5>36</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Semiconductor lasers</s0><s5>36</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Diode laser</s0><s5>37</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Laser diodes</s0><s5>37</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>38</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>38</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>39</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>39</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2><s5>40</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2><s5>40</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium phosphure</s0><s2>NK</s2><s5>41</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium phosphides</s0><s2>NK</s2><s5>41</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Composé quaternaire</s0><s5>42</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Quaternary compounds</s0><s5>42</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Puits quantique</s0><s5>43</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Quantum wells</s0><s5>43</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Rayonnement visible</s0><s5>44</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Visible radiation</s0><s5>44</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>48</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Experimental study</s0><s5>48</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>InGaAsP</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>As Ga In P</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>45</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>45</s5></fC07><fN21><s1>223</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 01E677 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 01E677 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:94-0479882
|texte= High power 875 nm A-free laser diodes
}}
| This area was generated with Dilib version V0.5.77. |  |